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PD - 95418 IRFI1010NPBF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET VDSS = 55V RDS(on) = 0.012 D G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew TO-220 FULLP AK Absolute Maximum Ratings Max. 49 35 290 58 0.38 20 360 43 5.8 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Typ. Max. 2.6 65 Units C/W 06/16/04 IRFI1010NPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Min. 55 2.0 30 Typ. 0.06 11 66 40 46 4.5 7.5 2900 880 330 12 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.012 VGS = 10V, ID = 26A 4.0 V VDS = VGS, ID = 250A S VDS = 25V, ID = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 43A 23 nC VDS = 44V 53 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 43A ns RG = 3.6 RD = 0.62, See Fig. 10 Between lead, 6mm (0.25in.) nH G from package and center of die contact VGS = 0V VDS = 25V pF = 1.0MHz, See Fig. 5 = 1.0MHz D S Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units 81 240 49 A 290 1.3 120 370 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 26A, VGS = 0V TJ = 25C, IF = 43A di/dt = 100A/s D S Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRF1010N data and test conditions VDD = 25V, starting TJ = 25C, L = 390H RG = 25, IAS = 43A. (See Figure 12) ISD 43A, di/dt 260A/s, VDD V(BR)DSS, T J 175C IRFI1010NPBF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100 I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 20s PULSE WIDTH TC = 175C 1 10 100 4.5V 10 0.1 1 20s PULSE WIDTH TC = 25C 10 A 100 10 0.1 A VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 72A I D , Drain-to-Source Current (A) 2.5 TJ = 25C 100 TJ = 175C 2.0 1.5 10 1.0 0.5 1 4 5 6 7 V DS = 25V 20s PULSE WIDTH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFI1010NPBF 5000 4000 3000 Coss 2000 V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd 20 I D = 43A V DS = 44V V DS = 28V 16 C, Capacitance (pF) 12 8 Crss 1000 4 0 1 10 100 A 0 0 20 40 60 FOR TEST CIRCUIT SEE FIGURE 13 80 100 120 140 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10s 100 100s 100 TJ = 175C TJ = 25C I D , Drain Current (A) 1ms 10 10ms 10 0.4 0.8 1.2 1.6 2.0 VGS = 0V 2.4 A 1 1 TC = 25C TJ = 175C Single Pulse 10 A 100 2.8 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFI1010NPBF 50 V DS VGS RD 40 RG 10V D.U.T. + ID , Drain Current (A) -VDD 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 10 PDM t1 t2 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFI1010NPBF EAS , Single Pulse Avalanche Energy (mJ) 1000 15V TOP 800 BOTTOM ID 18A 31A 43A VDS L DRIVER 600 RG 20V D.U.T IAS tp + V - DD A 400 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 200 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFI1010NPBF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFI1010NPBF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K " P AR T N U MB E R IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT COD E IR F I840G 924K 34 32 Note: "P" in assembly line position indicates "Lead-Free" DAT E COD E YE AR 9 = 1999 WE E K 24 L IN E K Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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